13.07.1998 semiconductor group pa g e 1 hitfet bts 141 smart lowside power switch features logic level input input protection (esd) thermal shutdown overload protection short circuit protection overvoltage protection current limitation status feedback with external input resistor analog driving possible product summary drain source voltage v 60 v ds on-state resistance r ds(on) 28 m w a current limit i d(lim) 25 nominal load current a i d(iso) 12 clamping energy mj e as 4000 application all kinds of resistive, inductive and capacitive loads in switching or linear applications c compatible power switch for 12 v and 24 v dc applications replaces electromechanical relays and discrete circuits general description n channel vertical power fet in smart sipmos chip on chip tech- nology. fully protected by embedded protected functions. protection overvoltage drain in esd hitfet a source current 1 3 over- protection temperature short circuit protection + dv/dt limitation lim itation v bb short circuit protection load 2 overload protection m
13.07.1998 semiconductor group pa g e 2 bts 141 maximum ratings at tj = 25 c unless otherwise specified parameter symbol unit value drain source voltage v ds 60 v drain source volta g e for short circuit protection v ds(sc) 32 continuous input current 1) -0.2v v in 10v v in < -0.2v or v in > 10v i in no limit | i in | 2 ma operating temperature t j c - 40 ... +150 storage temperature t stg - 55 ... +150 power dissipation t c = 25 c 149 w p tot unclamped single pulse inductive energy i d(iso) = 12 a 4000 mj e as e lectro s tatic d ischarge voltage (human body model) according to mil std 883d, method 3015.7 and eos/esd assn. standard s5.1 - 1993 v esd 3000 v load dump protection v loaddump 2) = v a + v s v in =low or high; v a =13.5 v t d = 400 ms, r i = 2 w , i d =0,5*12a t d = 400 ms, r i = 2 w , i d = 12a 100 84 v v ld din humidity category, din 40 040 e iec climatic category; din iec 68-1 40/150/56 thermal resistance junction - case: r thjc 0.84 k/w 75 r thja junction - ambient: smd version, device on pcb: 3) r thja 45 1 a sensor holding current of 500 a has to be guaranted in the case of thermal shutdown (see also page 3) 2 v loaddump is setup without the dut connected to the generator per iso 7637-1 and din 40839 3 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
13.07.1998 semiconductor group pa g e 3 bts 141 electrical characteristics parameter symbol unit values max. typ. min. at t j =25c, unless otherwise specified characteristics - drain source clamp voltage t j = - 40 ...+ 150c, i d = 10 ma 73 v v ds(az) 60 - i dss - off state drain current v ds = 32 v, t j = -40...+150 c, v in = 0 v 20 a 1.7 2.2 v in(th) 1.3 input threshold voltage i d = 2,7 ma v 35 100 a i in(1) - input current - normal operation, i d < i d(lim) : v in = 10 v 270 input current - current limitation mode, i d = i d(lim) : v in = 10 v 500 i in(2) - 2500 i in(3) 1000 input current - after thermal shutdown, i d =0 a: v in = 10 v 4000 - - - - i in(h) 500 300 input holding current after thermal shutdown t j = 25 c t j = 150 c 31 52 34 68 m w r ds(on) - - on-state resistance i d = 12 a, v in = 5 v, t j = 25 c i d = 12 a, v in = 5 v, t j = 150 c 25 45 on-state resistance i d = 12 a, v in = 10 v, t j = 25 c i d = 12 a, v in = 10 v, t j = 150 c 28 56 r ds(on) - - - i d(iso) 12 nominal load current (iso 10483) v in = 10 v, v ds = 0.5 v, t c = 85 c - a
13.07.1998 semiconductor group pa g e 4 bts 141 electrical characteristics parameter symbol values unit at t j =25c, unless otherwise specified min. typ. max. characteristics initial peak short circuit current limit v in = 10 v, v ds = 12 v i d(scp) - 100 - a current limit 1) v in = 10 v, v ds = 12 v, t m = 350 s, t j = -40...+150 c i d(lim) 25 35 50 dynamic characteristics s t on turn-on time v in to 90% i d : r l = 2,2 w , v in = 0 to 10 v, v bb = 12 v 40 100 - turn-off time v in to 10% i d : r l = 2,2 w , v in = 10 to 0 v, v bb = 12 v - t off 70 170 v/s slew rate on 70 to 50% v bb : r l = 2,2 w , v in = 0 to 10 v, v bb = 12 v -dv ds /dt on 3 1 - slew rate off 50 to 70% v bb : r l = 2,2 w , v in = 10 to 0 v, v bb = 12 v 1 3 dv ds /dt off - protection functions t jt c thermal overload trip temperature 165 - 150 e as unclamped single pulse inductive energy i d = 12 a, t j = 25 c, v bb = 32 v i d = 12 a, t j = 150 c, v bb = 32 v - - - - 4000 900 mj inverse diode v sd inverse diode forward voltage i f = 5*12a, t m = 300 m s, v in = 0 v 1.13 - - v 1 device switched on into existing short circuit (see diagram determination of i d(lim) . dependant on the application, these values might be exceeded for max. 50 s in case of short circuit occurs while the device is on condition
13.07.1998 semiconductor group pa g e 5 bts 141 block diagramm terms inductive and overvoltage output clamp hitfet in d v in i d v ds 1 i in s v bb r l 2 3 hitfet v z d s short circuit behaviour v in i d i d(scp) t 0 tm t 2 i d(lim) t 1 input circuit (esd protection) in esd-zd i source esd zener diodes are not designed for dc current > 2 ma @ v in >10v. t 0 : turn on into a short circuit t m : measurementpoint for i d(lim) t 1 : activation of the fast temperature sensor and regulation of the drain current to a level whe r the junction temperature remains constant. t 2 : thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement.
13.07.1998 semiconductor group pa g e 6 bts 141 on-state resistance r on = f(t j ); i d =12a; v in =10v -50 -25 0 25 50 75 100 c 150 t j 0 10 20 30 40 w 60 r ds(on) typ. max. maximum allowable power dissipation p tot = f(t c ) 0 20 40 60 80 100 120 c 150 150 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 bts 141 p tot on-state resistance r on = f(t j ); i d = 12a; v in =5v -50 -25 0 25 50 75 100 c 150 t j 0 10 20 30 40 50 w 70 r ds(on) typ. max. typ. input threshold voltage v in(th) = f(t j ); i d =2,7a; v ds =12v -50 -25 0 25 50 75 100 c 150 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v 2.0 v in(th)
13.07.1998 semiconductor group pa g e 7 bts 141 typ. transfer characteristics i d = f(v in ); v ds =12v; t j =25c 0 1 2 3 4 5 6 v 8 v in 0 4 8 12 16 20 a 28 i d typ. output characteristic i d = f(v ds ); t j =25c parameter: v in 0 1 2 3 v 5 v ds 0 5 10 15 20 a 30 i d vin=3v 4v 5v 6v 10v transient thermal impedance z thjc = f(t p ) parameter: d=t p /t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 0 0.005 0.01 0.02 0.05 0.1 0.2 d=0.5
13.07.1998 semiconductor group pa g e 8 bts 141 application examples: status signal of thermal shutdown by monitoring input current d s in c v bb hitfet v in r st v in thermal shutdown d v c d v = r st * i in(3)
13.07.1998 semiconductor group pa g e 9 bts 141 package and ordering code all dimensions in mm ordering code: q67060-s6502-a3 orderin g code: q67060-s6502-a2
13.07.1998 semiconductor group pa g e 10 bts 141 edition 7.97 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices o r systems 2 with the express written approval of the semiconductor group of siemens ag. 1)a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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